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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p941 Far-IR Spectroscopy of Oxygen Donors in Germanium   [ 213 K ]
  Authors: Paul Clauws, J. Vennik
• p947 Identification of the Carbon Associated Radiation Damage Levels in Silicon   [ 216 K ]
  Authors: G. Ferenczi, Charalamos A. Londos, T. Pavelka, M. Somogyi, A. Mertens
• p953 Thermal Donors in Silicon - 1986   [ 323 K ]
  Authors: G.D. Watkins
• p961 Preferential Alignment of Thermal Donors in Si   [ 302 K ]
  Authors: P. Wagner, H. Gottschalck, J.M. Trombetta, G.D. Watkins
• p967 Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon   [ 267 K ]
  Authors: Achim Dörnen, A. Hangleiter
• p973 Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers   [ 375 K ]
  Authors: S.K. Hahn, S. Shatas, H.J. Stein, M. Arst, D.K. Sadana, Z.U. Rek, V. Stojanoff
• p979 Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements   [ 223 K ]
  Authors: Joerg Weber, K. Köhler, F.J. Stützler, H.J. Queisser
• p985 The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates   [ 241 K ]
  Authors: Anne Henry, J.L. Pautrat, K. Saminadayar
• p991 Early Stage of the New Donors Formation in Cz-Silicon   [ 225 K ]
  Authors: Ph. Vendange, Anne Henry, K. Saminadayar, N. Magnea, J.L. Pautrat
• p997 Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)   [ 274 K ]
  Authors: J.A. Griffin, H. Navarro, Joerg Weber, L. Genzel