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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p1003 Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon   [ 223 K ]
  Authors: Satoru Matsumoto, Hiroyuki Kaneko, Takehiro Sasao
• p1009 Oxygen Endor of Thermal Donors in Silicon   [ 170 K ]
  Authors: D.A. Van Wezep, T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan
• p1015 A Model for the Density of Oxidation Induced Stacking Faults in Silicon   [ 364 K ]
  Authors: F.G. Kuper, Jeff Th.M. de Hosson, J.F. Verwey
• p1021 Enhanced Oxygen Diffusion in Silicon at Thermal Donor Formation Temperature   [ 253 K ]
  Authors: S.T. Lee, Paul Fellinger
• p1027 Radiative Defects in Electron Irradiated InP   [ 250 K ]
  Authors: A. Constant, Bruce W. Wessels
• p1033 Thermal Transformation of the Electron-Irradiation-Induced Defect H₄ in p Type InP   [ 240 K ]
  Authors: Th. Bretagnon, G. Bastide, M. Rouzeyre
• p1039 Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet   [ 176 K ]
  Authors: Feng Mei Wu, Qi Ji Lai, Ling Xu, Ban Rui Gong, Xiug Meng Zhou
• p1045 Electron Microscope Observation of Highly Disordered Regions in Neutron Irradiated Germanium   [ 540 K ]
  Authors: Michio Kiritani, Mitsuji Hirata
• p1051 Climbing of Nearly Screw Dislocations in InSb Thin Foils Irradiated in a High Voltage Electron Microscope   [ 402 K ]
  Authors: B. Legros-de Mauduit, M. Fnaiech, F. Reynaud
• p1057 Comparison of Electron Paramagnetic Resonance and Transport Data during Thermal Recovery of Fast Neutron Irradiated GaAs   [ 155 K ]
  Authors: A. Goltzene, B. Meyer, C. Schwab