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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p1123 Electron Microscopy Data for Threshold Energy of Point Defect Creation in Silicon   [ 420 K ]
  Authors: Liudmila I. Fedina, A.L. Aseev, S.G. Denisenko, L.S. Smirnov
• p1129 Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si   [ 266 K ]
  Authors: Brian Bech Nielsen, J.U. Andersen
• p1135 Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon   [ 224 K ]
  Authors: G. Weyer, Arne Nylandsted-Larsen, F.T. Pedersen, R. Galloni, R. Rizzoli
• p1141 Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation   [ 195 K ]
  Authors: Manfred Deicher, G. Grübel, E. Recknagel, Th. Wichert
• p1147 Defects Related to Nitrogen Implantation in Silicon Single Crystals   [ 359 K ]
  Authors: M. Bode, A. Jakubowicz, H.U. Habermeier
• p1153 Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study   [ 478 K ]
  Authors: G. Vanderschaeve, R.W. Carpenter, J.C. Barry, C.J. Varker, S.R. Wilson
• p1159 Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation   [ 174 K ]
  Authors: A. Hobbs, R.C. Barklie, K.J. Reeson, P.L.F. Hemment
• p1165 Investigation of the Lattice Defects in P Ion Implanted Silicon   [ 461 K ]
  Authors: H. Bender, D. Avau, W. Vandervorst, J. Van Landuyt, H.E. Maes
• p1171 Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium   [ 207 K ]
  Authors: Kazuyoshi Ito, Ichiro Baba, Kaoru Mizuno, Takashi Ito
• p1177 Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth   [ 201 K ]
  Authors: D. Schroyen, P. Hendrickx, G. Langouche