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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p1183 As-Implanted Lattice Sites of Dopants in Semiconductors   [ 212 K ]
  Authors: H. Hofsäss, G. Lindner, S. Winter, B. Besold, E. Recknagel, G. Weyer, J.W. Petersen
• p1189 Defect Structures in Ion-Implanted InSb   [ 214 K ]
  Authors: G. Weyer, H. Grann, F.T. Pedersen
• p1195 Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond   [ 282 K ]
  Authors: A.A. Gippius, V. Vavilov, V.V. Ushakov, V.M. Konnov, N.A. Rzakuliev, S.A. Kazarian, A.A. Shirokov, V.N. Jakimkin
• p1201 Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy   [ 167 K ]
  Authors: T. Kamijoh, A. Hashimoto, N. Watanabe, M. Sakuta
• p1207 Study of Deep Levels in Al_yGa_xIn_1-x-y P Material Grown by Movpe   [ 246 K ]
  Authors: E. Dupont-Nivet, J.N. Patillon, J.P. Andre, G.M. Martin
• p1213 Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs   [ 246 K ]
  Authors: C. Ghezzi, E. Gombia, L. Vanzetti
• p1219 Donor Identification in Bulk Gallium Arsenide   [ 143 K ]
  Authors: T.D. Harris, M.S. Skolnick
• p1223 Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs   [ 216 K ]
  Authors: Zuzanna Liliental-Weber, Eicke R. Weber, N. Newman, W.E. Spicer, R. Gronsky, J. Washburn
• p1229 Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs   [ 449 K ]
  Authors: P. Bunod, E. Molva, A. Chabli, F. Bertin, J. Blétry, Le Si Dang
• p1235 Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals   [ 243 K ]
  Authors: J.A. Mareš, J. Oswald, J. Pastrňák