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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p133 Diffusion of Tellurium in Silicon   [ 258 K ]
  Authors: Nicolaas Stolwijk, F. Rollert, D. Grünebaum, Helmut Mehrer, G. Weyer
• p139 Behaviour of Substitutional Gold in Silicon   [ 204 K ]
  Authors: Masayuki Yoshida, Masami Morooka, H. Tomokage
• p145 Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals   [ 431 K ]
  Authors: O. Ueda, K. Nauka, J. Lagowski, H.C. Gatos
• p151 Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering   [ 240 K ]
  Authors: R. Kühnapfel, Wolfgang Schröter, D. Gilles
• p157 Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena   [ 204 K ]
  Authors: D. Mathiot
• p163 Migration of Interstitial Boron in Silicon   [ 272 K ]
  Authors: R.D. Harris, G.D. Watkins, Lionel C. Kimerling
• p169 Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700°C   [ 298 K ]
  Authors: D. Gilles, Wolfgang Schröter
• p175 Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium   [ 176 K ]
  Authors: L.T. Ho
• p181 An Overview of Electron Paramagnetic Resonance Studies of Si-SiO₂ Interface States   [ 433 K ]
  Authors: K.L. Brower
• p189 Manganese Luminescence in GaAs/GaAlAs Superlattices   [ 134 K ]
  Authors: B. Plot, B. Deveaud, Bertrand Lambert, A. Chomette, A. Regreny