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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p317 Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability   [ 269 K ]
  Authors: W. Kuszko, P.J. Walczak, P. Trautman, Maria Kaminska, J.M. Baranowski
• p323 Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs   [ 276 K ]
  Authors: Yasunori Mochizuki, Toshiyuki Ikoma
• p329 The Energy Position of the EL2 Ground State in GaAs   [ 247 K ]
  Authors: P. Omling, P. Silverberg, L. Samuelson
• p335 EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers   [ 194 K ]
  Authors: M. Lopez, E. Abril, B. Jimenez, M. Aguilar, Elias Muñoz Merino
• p341 As_Ga-As_i-As_Ga Complex as a Model of EL2 Centre in GaAs   [ 179 K ]
  Authors: T. Figielski
• p347 Optically-Assisted Thermal Anneal of Metastable Defects in GaAs   [ 277 K ]
  Authors: J.C. Parker, Ralph Bray
• p353 Resonant Raman Scattering at Point Defects in GaAs   [ 231 K ]
  Authors: Matthias Scheffler, Udo Scherz
• p359 Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs   [ 182 K ]
  Authors: B. Dischler, Franziska Fuchs, Ulrich Kaufmann
• p365 ESR Studies of Semi-Insulating GaAs Crystals   [ 263 K ]
  Authors: J. Bittebierre, R.T. Cox, E. Molva
• p371 EL2 Quenching Behaviour in Infrared GaAs Transmission Images   [ 254 K ]
  Authors: M. Castagne, J.P. Fillard, J. Bonnafe, P. Gall