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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p377 Introduction to Metastability: Configuration Coordinate Diagrams   [ 477 K ]
  Authors: G.A. Baraff
• p387 Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon   [ 263 K ]
  Authors: A. Chantre, Lionel C. Kimerling
• p393 Metastable States of the DX Center in Al_xGa_1-xAs   [ 299 K ]
  Authors: T.N. Theis
• p399 Environmental Effects in DX (Te) Centers in GaAlAs   [ 228 K ]
  Authors: L. Dobaczewski, Jerzy M. Langer
• p405 Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs   [ 269 K ]
  Authors: S.V. Subramanian, B.M. Arora, Y.N. Mahopatra, Vikram Kumar
• p411 Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP   [ 221 K ]
  Authors: Elias Muñoz Merino, A. Gomez, Enrique Calleja, J.J. Criado, J.M. Herrero, F. Sandoval
• p417 Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs   [ 268 K ]
  Authors: P.M. Mooney, Enrique Calleja, S.L. Wright, M. Heiblum
• p423 The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE   [ 187 K ]
  Authors: P. Krispin, J. Maege
• p429 A New Model of Deep Donor Centers in Al_xGa_1-xAs   [ 180 K ]
  Authors: J.C.M. Henning, J.P.M. Ansems
• p435 Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors   [ 425 K ]
  Authors: N.T. Bagraev, V.A. Mashkov