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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p445 Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions   [ 232 K ]
  Authors: Alain Sibille
• p451 Multiphonon Recombination by Bourgoin-Corbett Mechanism   [ 159 K ]
  Authors: Tomas Markvart
• p457 Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon   [ 234 K ]
  Authors: D.D. Nolte, Eugene E. Haller
• p463 On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs   [ 179 K ]
  Authors: P.A. Murawala, D. Stiévenard, J.C. Bourgoin, Michel Lannoo
• p469 Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξ_μ   [ 186 K ]
  Authors: Ming Fu Li, Jian Xin Chen, Xue Shu Zhao, Yan Jin Li
• p475 Cathodoluminescence Contrast from Localized Defects in Semiconductors   [ 216 K ]
  Authors: A. Jakubowicz
• p481 A Study of Electron Capture Cross Sections of A-Center and Gold Acceptor in Silicon under Uniaxial Stress   [ 233 K ]
  Authors: Jian-Xun Mou, Xiu-Chen Yao, Guo-Gang Qin
• p487 Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice   [ 228 K ]
  Authors: M. Godlewski, A.J. Zakrzewski, M.Z. Cieplak
• p493 Zero-Phonon Line of Deep-Level Luminescence in GaAs   [ 195 K ]
  Authors: Michio Tajima
• p499 Accurate Determination of Capture Time Constant of Interface States in MOS Structures   [ 214 K ]
  Authors: D. Vuillaume, J. Barrier, D. Stiévenard, J.C. Bourgoin