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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p505 Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors   [ 451 K ]
  Authors: Johann Martin Spaeth
• p515 Constant Photo-EPR: A New Method for Deep Level Characterization   [ 261 K ]
  Authors: W. Jantsch, G. Brunthaler, G. Hendorfer
• p521 Characterization of Deep Levels by Microwave Absorption Spectroscopy   [ 218 K ]
  Authors: G. Ferenczi, D.L. Huber, W. Jantsch, G. Brunthaler
• p527 Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam   [ 219 K ]
  Authors: Pekka J. Hautojärvi, H. Huomo, J. Lahtinen, J. Mäkinen
• p533 Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs_0.6P_0.4   [ 245 K ]
  Authors: J.R. Morante, P. Roura, A. Pérez-Rodríguez, Josep Samitier, A. Cornet, A. Herms
• p539 Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs   [ 230 K ]
  Authors: Josep Samitier, J.R. Morante, A. Cornet, A. Herms, P. Roura, A. Pérez-Rodríguez
• p545 Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon   [ 341 K ]
  Authors: C. Cabanel, J.L. Maurice, J.Y. Laval
• p551 On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC   [ 221 K ]
  Authors: Th. Wichert, M. Swanson, A.F. Quenneville
• p557 Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method   [ 236 K ]
  Authors: Doris Forkel-Wirth, H. Foettinger, M. Iwatschenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, Herbert Wolf
• p563 Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon   [ 334 K ]
  Authors: Guo-Gang Qin, Yong-Chang Du, J. Wu, Xiu-Chen Yao