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Defects in Semiconductors 14

Materials Science Forum Volumes 10 - 12

• Papers
• Abstracts

• p573 Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon   [ 280 K ]
  Authors: Sokrates T. Pantelides
• p579 Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs   [ 187 K ]
  Authors: Joerg Weber, F. Bantien, S.J. Pearton, W.C. Dautremont-Smith
• p585 Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon   [ 271 K ]
  Authors: N.M. Johnson, S.K. Hahn, H.J. Stein
• p591 Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si   [ 161 K ]
  Authors: Jacques Chevallier, A. Jalil, R. Azoulay, A. Mircea
• p597 In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere   [ 178 K ]
  Authors: T.S. Shi, G.R. Bai, M.W. Qi, J. Zhou
• p603 The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors   [ 333 K ]
  Authors: G. Martinez
• p615 Transition-Metal Luminescence in III-V Alloys   [ 210 K ]
  Authors: S. Nilsson, L. Samuelson
• p621 The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR   [ 287 K ]
  Authors: Colin A. Bates, Janette L. Dunn, J. Handley, A.F. Labadz, M. Darcha, M.En.- Naqadi, A.M. Vasson
• p627 Identification of the Co¹⁺ Double Acceptor State in GaAs   [ 115 K ]
  Authors: Dariusz Wasik, M. Baj
• p633 Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements   [ 204 K ]
  Authors: A. Stapor, J. Raczynska, Hanka Przybylinska, Andrzej Sienkiewicz, K. Fronc, Jerzy M. Langer