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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

• Papers
• Abstracts

• p247 A Search on the Identity of the Ev+0.34 eV C-Related Defect in p-Si   [ 297 K ]
  Authors: Charalamos A. Londos
• p253 Simulation of Hydrogen Diffusion in n and p Type Silicon: Determination of Kinetic and Thermodynamic Parameters   [ 219 K ]
  Authors: D. Ballutaud, R. Rizk, P. de Mierry
• p259 Hydrogen Passivation of Grain Boundaries in Polysilicon: Computer Simulation   [ 227 K ]
  Authors: L.E. Polyak, E.A. Katz
• p265 Modification of the Properties of Si Crystals Exposed to Atomic Hydrogen at High Temperatures   [ 293 K ]
  Authors: Sergei V. Koveshnikov, S.V. Nosenko, A.M. Surma
• p271 Simulation of Point-Defect Assisted Diffusion of Boron in RTA-Treated Silicon Wafers   [ 198 K ]
  Authors: H. Gdanitz, G. Ritter
• p277 Dopant Deactivation and Electrically Active Defects Induced in Silicon by CF₄ and CBrF₃ Plasma Etching   [ 257 K ]
  Authors: Yu.P. Baryshev, A.A. Orlikovsky, K.A. Valiev, M.N. Zolotukhin
• p283 Formation and Properties of Metastable Silicide Precipitates in Silicon   [ 699 K ]
  Authors: Michael Seibt, Wolfgang Schröter
• p295 Mechanical Behaviour of Semiconductors in Terms of Dislocation Dynamics   [ 641 K ]
  Authors: I. Yonenaga, Koji Sumino
• p311 Dislocation Kink Dynamics and Gettering Processes in Semiconductors   [ 553 K ]
  Authors: B.Ya. Farber, Yu.L. Iunin, V.I. Nikitenko, Valeri I. Orlov
• p323 Local Distribution of Structure Defects Induced by Microhardness Indentation in GaAs   [ 231 K ]
  Authors: T. Wosiński, O. Breitenstein, Ch. Eisenschmidt, L. Fang