Gettering and Defect Engineering in Semiconductor Technology

p329 Dynamics of a Dislocation in the Potential Relief of Semiconductor Crystals under Varying Applied Forces [ 320 K ]
Authors: D.A. Kamaev, V.M. Chernov
p335 Peculiarities of Dislocation Luminescence of Covalent Semiconductors [ 203 K ]
Authors: A.N. Izotov, A.I. Kolyubakin, S.A. Shevchenko, E.A. Steinman
p341 Defects in Multicrystalline Silicon [ 656 K ]
Authors: R. Schindler, A. Räuber
p353 Origin of Recombination at Extended Defects: EBIC Contrast Experiments and Theory on Dislocations in GaAs [ 441 K ]
Authors: B. Sieber
p367 Electrical Properties of Dislocation Impurity Atmospheres in Si [ 227 K ]
Authors: E.B. Yakimov, Nikolai Yarykin, Sergei V. Koveshnikov
p373 Electrical Properties of Defects in Multicrystalline Silicon [ 335 K ]
Authors: Martin Kittler, J. Lärz, G. Morgenstern, Winfried Seifert
p379 Process Induced Defects in TiSi₂-N⁺/P-Structures [ 389 K ]
Authors: H.B. Erzgräber, P. Zaumseil, E. Bugiel, R. Sorge, K. Tittelbach-Helmrich, F. Richter
p387 Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure [ 281 K ]
Authors: Andrzej Misiuk
p393 Evolution of Monoclinic SiAs Precipitates in Heavily As⁺ Implanted and Isothermally Annealed Silicon [ 372 K ]
Authors: A. Armigliato, A. Parisini, M. Derdour, P. Lazzari, L. Moro, D. Nobili, Sandro Solmi
p399 Defect Structures in Si Preamorphized Wafers [ 364 K ]
Authors: S. Prussin

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