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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

• Papers
• Abstracts

• p405 Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO₂ Precipitates   [ 253 K ]
  Authors: A.B. Danilin, K.A. Drakin, A.A. Malinin, V.N. Mordkovich, A.F. Petrov, O.I. Vyletalina
• p411 Interaction of Implanted into Silicon Fluorine with Radiation Defects   [ 200 K ]
  Authors: L.Ya. Krasnobaev, A.A. Malinin, V.V. Makarov, I.B. Sayapin
• p417 Electrical Activity of Halogen-Silicon Complexes   [ 180 K ]
  Authors: L.Ya. Krasnobaev, N.M. Omelyanovskaya
• p423 Radiation Defect-Induced Optical Absorption of GaP   [ 244 K ]
  Authors: C. Ascheron, H. Neumann, W. Hörig, G. Nooke
• p429 Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon   [ 443 K ]
  Authors: S. Kawado, Soichiro Kojima, I. Maekawa, Tetsuya Ishikawa
• p439 Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects   [ 1 M ]
  Authors: M. Reiche, J. Heydenreich
• p449 TEM Techniques for 2D Junction Delineation and Correlation with SIMS and SRP   [ 714 K ]
  Authors: A. Romano-Rodríguez, Jan Vanhellemont, A. De Keersgieter, W. Vandervorst, J.R. Morante
• p455 Defect Generation in Cz-Silicon Used for the Design of Synchrotron Monochromator Crystals   [ 302 K ]
  Authors: P. Zaumseil, U. Winter, St. Joksch
• p461 X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures   [ 288 K ]
  Authors: V.V. Ratnikov, T.S. Argunova, K.E. Mironov, L.M. Sorokin
• p467 Grazing Incidence Diffraction X-Ray Topography   [ 208 K ]
  Authors: R.M. Imamov, D.V. Novikov