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Gettering and Defect Engineering in Semiconductor Technology

Solid State Phenomena Volumes 19 - 20

• Papers
• Abstracts

• p535 Diagnostics of Defects from the Noise Spectra   [ 270 K ]
  Authors: V.M. Aroutyunyan, F.V. Gasparyan, S.V. Melkonyan
• p541 Statistical Analysis of the Assembly-Induced Degradation of the Silicon Device Parameters   [ 397 K ]
  Authors: F. Gaiseanu
• p551 Mechanical Strain Relaxation during Lattice-Mismatched Epitaxial Growth   [ 471 K ]
  Authors: A. Schlachetzki, H.-H. Wehmann
• p563 Interfacial Dislocations in the GaSb/GaAs (001) Heterostructure   [ 641 K ]
  Authors: A.M. Rocher
• p573 Si/Ge - Heterostructures - Stability of Strained Layer Superlattices   [ 242 K ]
  Authors: Erich Kasper
• p581 Distribution of Defects in InAs_1-x-ySb_xP_y-InAs DHs   [ 275 K ]
  Authors: T.S. Argunova, R.N. Kyutt, B.A. Matveev, S.S. Ruvimov, N.M. Stus', G.N. Talalakin
• p587 Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs   [ 394 K ]
  Authors: B.S. Yavich, I.N. Kochnev, P.P. Buinov, N.I. Katzavetz, T.S. Argunova, G.N. Mosina, S.S. Ruvimov
• p593 XPS Sputter Depth Profiling Applid to the Analysis of Si/SiO₂, Si/SiO_xN_y and Si/Si₃N₄   [ 256 K ]
  Authors: O. Benkherourou, J.P. Deville
• p599 Electrical Stability of Thin Nitroxide Layers on Silicon after RTO/RTN/RTO-Treatment   [ 211 K ]
  Authors: G. Weidner, G. Prösch, A. Beyer, M. Wolf, V. Rank, M. Kopp
• p605 Germanium and Antimony Epitaxy with Large Lattice Misfit   [ 248 K ]
  Authors: H.J. Osten, J. Klatt, G. Lippert