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Ion Implantation in Semiconductors

Solid State Phenomena Volumes 1 - 2

• Papers
• Abstracts

• p1 Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection   [ 393 K ]
  Authors: A. Borghesi, G. Guizzetti, L. Nosenzo
• p11 Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon   [ 941 K ]
  Authors: H. Jaeger
• p33 Channeling, RBS and Mössbauer Measurements on ¹⁵¹Eu Implanted Si   [ 474 K ]
  Authors: A. Bhagawat, M.B. Kurup, K.G. Prasad, R.P. Sharma
• p45 Cross-Sectional Transmission Electron Microscope Study of Bf₂+-Implanted (001) and (111) Silicon   [ 1 M ]
  Authors: Lih Juann Chen, C.W. Nieh, Chih Hsing Chu
• p59 EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon   [ 323 K ]
  Authors: I.E. Bondarenko, E.B. Yakimov
• p65 Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation   [ 940 K ]
  Authors: Sandro Solmi, Marco Servidori
• p85 Electrical Characterization of Buried Layers in Silicon   [ 942 K ]
  Authors: Wolfgang R. Fahrner, E. Klausmann
• p115 Mechanism of Buried Oxide Formation by Implanted Oxygen   [ 1 M ]
  Authors: J. Stoemenos
• p133 Diffusion of Ion-Implanted Group III and V Impurities in SlO₂   [ 890 K ]
  Authors: A.H. Van Ommen
• p153 Annealing of Implants Reduces Lattice Defects and 1/f Noise   [ 220 K ]
  Authors: L.K.J. Vandamme