HOME CONTACT

Username: Password:

> @scientific.net

Ion Implantation in Semiconductors

Solid State Phenomena Volumes 1 - 2

• Papers
• Abstracts

• p361 Implantation of Silicon in Indium Phosphide for Metal Insulator Semiconductor Transistors   [ 479 K ]
  Authors: N. Duhamel, G. Post, P. Krauz, P. Henoc, B. Descouts
• p371 Thermal Annealing of Be Implanted InSb   [ 332 K ]
  Authors: H. Alberts, R. Cilliers
• p377 Range of Various Implanted Ions in III-V Materials   [ 811 K ]
  Authors: Pierre-Noel Favennec, M. Gauneau, M. Salvi
• p417 The Compositional Disordering of AlGaAs/GaAs Superlattices by Si and Be Ion Implantation   [ 311 K ]
  Authors: Jyunji Kobayashi
• p429 Low-Energy Hydrogen-Ion Implantation in Zinc Oxide   [ 1 M ]
  Authors: G. Yaron, Y. Goldstein, A. Many
• p457 Optical Properties of Hydrogen-Implanted Semiconductors   [ 400 K ]
  Authors: Jakub Tatarkiewicz
• p465 Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions   [ 651 K ]
  Authors: M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov