Defects in Semiconductors 15

p91 EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction [ 212 K ]
Authors: G.A. Baraff, M. Schluter, Michel Lannoo
p97 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs [ 180 K ]
Authors: Hans Jürgen von Bardeleben, J.C. Bourgoin, D. Stiévenard
p101 EL2 - Intracenter Absorption under Hydrostatic Pressure [ 191 K ]
Authors: M. Baj, P. Dreszer
p107 Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2 [ 217 K ]
Authors: J. Bittebierre, R.T. Cox, R. Picard, E. Molva
p113 Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs [ 238 K ]
Authors: L. Dobaczewski
p119 Correlation Effects in Native Defects in GaAs [ 192 K ]
Authors: Marilia J. Caldas, A. Fazzio
p125 A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs [ 135 K ]
Authors: Wei Kun Ge, Desheng Jiang, Chunying Song, Jiefei Zheng
p129 Generation Process of EL2 Centers in GaAs [ 206 K ]
Authors: Masashi Suezawa, Koji Sumino, Fumio Orito
p135 Characterization of EL2 Level in As-Grown GaAs Prepared by MBE [ 220 K ]
Authors: V. Smid, P. Hubik, A. Bosacchi, S. Franchi, E. Gombia, L. Vanzetti
p141 Interstitial Defect Reactions in Silicon [ 466 K ]
Authors: Lionel C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer

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