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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p649 Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon   [ 263 K ]
  Authors: D. Mathiot
• p655 Atomic Geometry and Its Stability of Oxygen Impurities in Silicon   [ 253 K ]
  Authors: M. Saito, Atsushi Oshiyama
• p661 Formation of Oxide Precipitates in Cz Grown Silicon   [ 164 K ]
  Authors: J. Seres, Erzsébet Hild
• p667 New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C   [ 293 K ]
  Authors: K. Schmalz, K. Tittelbach, Valentin V. Emtsev, Yu.N. Daluda
• p673 Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C   [ 243 K ]
  Authors: Y. Kamiura, Fumio Hashimoto, M. Yoneta
• p679 Defects in Heterostructures and Superlattices   [ 327 K ]
  Authors: D. Stiévenard, S.L. Feng
• p689 The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells   [ 462 K ]
  Authors: A. Ourmazd, J. Cunningham, D.W. Taylor, J.A. Rentschler, C.W. Tu
• p695 Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells   [ 254 K ]
  Authors: M. Takikawa, K. Kelting, G. Brunthaler, M. Takechi, J. Komeno
• p701 Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour   [ 170 K ]
  Authors: Nicolaas Stolwijk, D. Grünebaum, M. Perret, M. Brohl
• p707 Diffusion and Solubility of Platinum in Silicon   [ 264 K ]
  Authors: J. Hauber, W. Frank, Nicolaas Stolwijk