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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p769 Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP   [ 313 K ]
  Authors: Bo Monemar, W.M. Chen, M. Godlewski
• p775 Isotopic Effects in GaAs:Ni   [ 166 K ]
  Authors: B. Clerjaud, D. Côte, F. Gendron, M. Krause, W. Ulrici
• p779 Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors   [ 221 K ]
  Authors: A.A. Gippius, V.V. Chernyaev, N.Yu. Ponomarev, V.V. Ushakov
• p785 Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs   [ 222 K ]
  Authors: M. Baeumler, P.M. Mooney, Ulrich Kaufmann
• p791 Positron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAs   [ 266 K ]
  Authors: C. Corbel, F. Pierre, Pekka J. Hautojärvi, Kimmo Saarinen, P. Moser
• p797 Magnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAs   [ 179 K ]
  Authors: M. Baeumler, B.K. Meyer, Ulrich Kaufmann, J. Schneider
• p803 Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps   [ 216 K ]
  Authors: T. Pavelka, G. Ferenczi
• p809 Optically Anisotropic Deep Luminescent Centers in GaAs   [ 316 K ]
  Authors: Sergei S. Ostapenko, Moissei K. Sheinkman
• p815 Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs   [ 196 K ]
  Authors: J. Wagner, M. Ramsteiner, R. Murray, R.C. Newman
• p821 Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques   [ 294 K ]
  Authors: O.O. Awadelkarim, M. Godlewski, Bo Monemar