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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p1063 Hydrogen Passivation of Donors and Acceptors in InP   [ 183 K ]
  Authors: E.M. Omeljanovsky, A.V. Pakhomov, A.Y. Polyakov
• p1067 Two Electron D-State of DX-Centers   [ 201 K ]
  Authors: K. Khachaturyan, Eicke R. Weber, Maria Kaminska
• p1073 The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy   [ 279 K ]
  Authors: T.N. Theis, T.N. Morgan, B.D. Parker, S.L. Wright
• p1079 The Vacancy-Interstitial Model of DX Centers   [ 246 K ]
  Authors: T.N. Morgan
• p1085 The Double-Faced DX Center in Al_xGa_1-xAs   [ 152 K ]
  Authors: J.C.M. Henning, E.A. Montie, J.P.M. Ansems
• p1091 Long Lived Resonance States in Si-Doped AlGaAs   [ 258 K ]
  Authors: Harold P. Hjalmarson, T.J. Drummond
• p1097 Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure   [ 286 K ]
  Authors: M. Zigone, P. Seguy, H. Roux-Buisson, G. Martinez
• p1103 Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te   [ 224 K ]
  Authors: Ming Fu Li, W. Shan, P.Y. Yu, W.L. Hansen, Eicke R. Weber, E. Bauser
• p1109 Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction   [ 280 K ]
  Authors: P.M. Mooney, T.N. Theis, S.L. Wright
• p1115 Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy   [ 220 K ]
  Authors: Enrique Calleja, A. Gomez, J.M. Criado, Elias Muñoz Merino