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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p151 Carbon-Related Processes in Crystalline Silicon   [ 421 K ]
  Authors: Gordon Davies
• p159 Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy   [ 243 K ]
  Authors: W. Kürner, Klaus Thonke, R. Sauer, M.T. Asom, W. Zulehner
• p165 Peculiarities of Behavior of Irradiated Heat-Treated Si   [ 181 K ]
  Authors: V.B. Neimash, V.M. Siratsky, M.G. Sosnin, V.M. Tsmots, V.I. Shakhovtsov, V.L. Shindich, M.G. Mil'vidskii
• p171 On the Role of Point Defects in Gettering Processes   [ 283 K ]
  Authors: Jan Vanhellemont, C. Claeys
• p177 The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing   [ 227 K ]
  Authors: Marcel W. Hüppi
• p183 Deep Levels in Silicon as a Result of CoSi₂ Formation   [ 323 K ]
  Authors: L.W. Lu, G. Groeseneken, L. Van den Hove, Karen Maex
• p189 Precipitation Phenomena in CMOS Technology   [ 251 K ]
  Authors: I. Fàbian, T. Kormàny, K. Erdélyi, E.K. Pal
• p195 Formation of SiO_X Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy   [ 300 K ]
  Authors: Erzsébet Hild, S. Nouredin, T. Kormàny
• p201 Influence of Defects on the Impurity Diffusion in SIMOX Structures   [ 231 K ]
  Authors: Dimitris Tsoukalas, P. Normand, N. Guillemot
• p207 Defects in High-Dose Oxygen Implanted Silicon   [ 392 K ]
  Authors: A. De Veirman, K. Yallup, J. Van Landuyt, H.E. Maes