HOME CONTACT

Username: Password:

> @scientific.net

Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p1427 Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface   [ 194 K ]
  Authors: W. Shan, Ming Fu Li, P.Y. Yu, W. Walukiewicz, W.L. Hansen
• p1433 Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si   [ 229 K ]
  Authors: W.J. Choyke, J. Anthony Powell, T.T. Cheng, P. Pirouz
• p1439 Deep Levels in GaAs Mesfets   [ 133 K ]
  Authors: P. Macháč, V. Pantucek, J. Merta
• p1445 Defects in MOS Technologies   [ 431 K ]
  Authors: D. Korytàr, P. Kavicky, M. Hulman, A. Weissensteiner, L. Tuchscher
• p1451 Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces   [ 230 K ]
  Authors: S. Lànyi, M. Wolcyrz, E. Pincik, V. Nadazdy
• p1457 Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide   [ 203 K ]
  Authors: J. Gual, Josep Samitier, A. Pérez-Rodríguez, J.R. Morante, Pierre Boher, M. Renaud
• p1463 Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy   [ 175 K ]
  Authors: G. Papaioannou, V. Ioannou-Sougleridis, S. Cristoloveanu, M. Bruel, P.L.F. Hemment
• p1469 Coherent Potential Approximation Calcutations of the Electronic Structure of Amorphous Silicon   [ 180 K ]
  Authors: A.K. Wronski, M.K. Urbanski, S.M. Pietruszko
• p1475 Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H   [ 221 K ]
  Authors: D.L. Huber, G. Zentai
• p1481 Influence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier Characteristics   [ 222 K ]
  Authors: J.C. van den Heuvel, R.C. van Oort, M.J. Geerts, B. Bokhorst, J.W. Metselaar