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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p275 Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level   [ 245 K ]
  Authors: Jerzy M. Langer, Christian Delerue, Michel Lannoo
• p281 One- and Two-Oxygen Defects in Silicon - A Theoretical Study   [ 230 K ]
  Authors: Peter Deák, L.C. Snyder, James W. Corbett, R.Z. Wu, A. Sólyom
• p287 Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs   [ 277 K ]
  Authors: Atsushi Oshiyama
• p293 Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon   [ 238 K ]
  Authors: Harald Overhof, Matthias Scheffler, C.M. Weinert
• p299 Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes   [ 198 K ]
  Authors: D. Weider, Matthias Scheffler, Udo Scherz
• p305 Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs   [ 254 K ]
  Authors: Frederick G. Anderson, Frank S. Ham
• p311 Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy   [ 214 K ]
  Authors: Q.X. Zhao, Bo Monemar
• p317 Localized Defect States in Tetrahedrally Bonded Semiconductors   [ 234 K ]
  Authors: S. Goettig, C.G. Morgan-Pond
• p323 Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon   [ 249 K ]
  Authors: C. Kaneta, Hiroshi Yamada-Kaneta, A. Ohsawa
• p329 Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon   [ 202 K ]
  Authors: L.C. Snyder, Peter Deák, R.Z. Wu, James W. Corbett