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Defects in Semiconductors 15

Materials Science Forum Volumes 38 - 41

• Papers
• Abstracts

• p463 Level Splitting of the Cd-Ground State in Silicon   [ 198 K ]
  Authors: Herbert Wolf, S. Deubler, Doris Forkel-Wirth, F. Meyer, M. Uhrmacher, W. Witthuhn
• p469 Temperature Dependence of the Capture Cross Section of Se^o as Measured by Microwave Absorption Spectroscopy (MAS)   [ 128 K ]
  Authors: T. Pavelka, B. Hemm
• p473 Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy   [ 353 K ]
  Authors: Paul Clauws, J. Vennik
• p481 A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon   [ 250 K ]
  Authors: S.P. Chappell, Gordon Davies, Edward C. Lightowlers, R.C. Newman
• p487 The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy   [ 249 K ]
  Authors: J. Hage, P. Wagner
• p493 Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs   [ 185 K ]
  Authors: L. Dmowski, Dariusz Wasik, E. Litwin-Staszewska, T. Suski, P. Wiśniewski, W.H. Zhuang
• p499 Entropy-Driven Metastable Defects in Silicon   [ 283 K ]
  Authors: B. Hamilton, A.R. Peaker, Sokrates T. Pantelides
• p505 Chemical Trends in II-VI Semiconductors Doped with 3d Impurities   [ 320 K ]
  Authors: K.A. Kikoin, V.I. Sokolov
• p513 Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos   [ 239 K ]
  Authors: Gertrude F. Neumark
• p519 Deep Levels due to Transition Metal Impurities in CdTe   [ 279 K ]
  Authors: G. Hendorfer, W. Jantsch