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Molecular Beam Epitaxy

Materials Science Forum Volume 69

• Papers
• Abstracts

• p53 MBE System for Research   [ 271 K ]
  Authors: M. Laznicka
• p57 Optical Simulation of the Effusion Molecular Beams in Epitaxy Technology   [ 105 K ]
  Authors: B. Adamczyk, L. Michalak, E. Radzka
• p61 The Liquid Metal Ion Source for Molecular Beam Epitaxy of Silicon   [ 85 K ]
  Authors: V. Avrutin, A.F. Vyatkin
• p65 Prior to Growth Examinations of the Quality of GaAs Substrates   [ 50 K ]
  Authors: M. Cukr, J. Kub, J. Pastrňák, J. Oswald, V. Mísková
• p67 The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications   [ 305 K ]
  Authors: P.S. Kop'ev, A.A. Budza, S.V. Ivanov, N.N. Ledentsov, B.Ya. Mel'tser, M.Yu. Nadtochy, V.M. Ustinov
• p75 III-V Heterostructure Lasers with Short Period Superlattice Recombination Region   [ 199 K ]
  Authors: A.M. Vasil'ev, A.A. Dzamashvili, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, B.Ya. Mel'tser, V.M. Ustinov
• p81 AlGaAs/GaAs Heterojunction Photodiodes Grown by MBE   [ 126 K ]
  Authors: Ferenc Riesz, B. Szentpáli, I. Mojzes, A. Salokatve, H. Asonen, M. Pessa
• p85 An Extension of the Interfacial Layer Theory for Mixed Phase Metal-Semiconductor Contact   [ 511 K ]
  Authors: T.Q. Tuy, I. Mojzes, B. Szentpáli, I. Cseh
• p99 Electrophysical Parameters of the Metal-Semiconductor Interface in MBE and VPE Grown GaAs Schottky Contacts   [ 100 K ]
  Authors: Zsolt E. Horváth, B. Kovács, M. Németh-Sallay, Béla Pécz
• p101 The Dependence of Schottky Barrier Height of Metal-Semiconductor Contacts on the Ratio of Interfacial Area Occupied by Different Metal Components   [ 234 K ]
  Authors: T.Q. Tuy, I. Mojzes, B. Szentpáli