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Shallow Impurities in Semiconductors IV

Materials Science Forum Volumes 65 - 66

• Papers
• Abstracts

• p271 Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities   [ 344 K ]
  Authors: Ya.E. Pokrovskii, O.I. Smirnova
• p281 Iron- and Chromium-Indium Pairs in Silicon   [ 291 K ]
  Authors: U. Reislöhner, W. Witthuhn
• p287 Ab Initio Calculations on Interstitial O Clusters in Si   [ 269 K ]
  Authors: R. Jones, Sven Öberg, A. Umerski
• p293 Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results   [ 286 K ]
  Authors: K.K. Larsen, Arne Nylandsted Larsen
• p299 Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si   [ 274 K ]
  Authors: Z.G. Gogua
• p307 On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon   [ 269 K ]
  Authors: Werner Puff, S. Dannefaer
• p313 The p_3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium   [ 500 K ]
  Authors: G. Piao, R.A. Lewis, P. Fisher
• p323 Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium   [ 322 K ]
  Authors: G.J. Takacs, P. Fisher, C.A. Freeth
• p329 Spectral Dependence of the Shallow Impurity Optical Absorption Cross Section in Germanium   [ 133 K ]
  Authors: E.G. Chirkova, Yu.P. Druzhinin
• p333 Resonance States of a Shallow Acceptor in Degenerate Anisotropic Band Semiconductor   [ 209 K ]
  Authors: V.G. Golubev, G.I. Kropotov, S.A. Proshin, V.P. Vasiliev