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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

• Papers
• Abstracts

• p641 Energy Transfer in Rare-Earth-Doped III-V Semiconductors   [ 664 K ]
  Authors: Kenichiro Takahei, Akihito Taguchi
• p653 Dopant Enhancement of the 1.54 µm Emission of Erbium Implanted in Silicon   [ 225 K ]
  Authors: Jürgen Michel, Lionel C. Kimerling, J.L. Benton, D.J. Eaglesham, E.A. Fitzgerald, D.C. Jacobson, J.M. Poate, Y.-H. Xie, R.F. Ferrante
• p659 Theory of Substitutional Rare Earth Impurities in Semiconductors   [ 179 K ]
  Authors: Christian Delerue, Michel Lannoo
• p665 Spectroscopic Investigation of the Er Site in GaAs:Er   [ 433 K ]
  Authors: P.B. Klein, F.G. Moore, H.B. Dietrich
• p671 Excitation Mechanism of the Erbium 4F Emissions in GaAs   [ 323 K ]
  Authors: J.E. Colon, D.W. Elsaesser, Y.K. Yeo, R.L. Hengehold, G.S. Pomrenke
• p677 Electrical Properties of Yb, Er Doped InP   [ 192 K ]
  Authors: D. Seghier, Taha Benyattou, G. Bremond, Frédérique Ducroquet, Jean-Jacques Marchand, Gérard Guillot, Christophe Lhomer, Bertrand Lambert, Yves Toudic, Alain Le Corre
• p683 Optically Detected Cyclotron Resonance Studies of Erbium and Ytterbium Doped InP   [ 231 K ]
  Authors: M. Godlewski, B.J. Heijmink Liesert, T. Gregorkiewicz, C.A.J. Ammerlaan
• p689 Photoluminescent Properties of Yb Doped InAsP Alloys   [ 260 K ]
  Authors: A.J. Neuhalfen, D.M. Williams, Bruce W. Wessels
• p695 FTIR High Resolution Optical Study of GaAs:Fe   [ 344 K ]
  Authors: Klaus Pressel, G. Rückert, Klaus Thonke, Achim Dörnen
• p701 Interstitial and Substitutional Mn in GaAs and GaP: Magnetic Resonance Studies   [ 277 K ]
  Authors: S.J.C.H.M. Van Gisbergen, A.A. Ezhevskii, M. Godlewski, T. Gregorkiewicz, C.A.J. Ammerlaan