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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

• Papers
• Abstracts

• p191 Shallow Excited States of the 1014 meV Cu Related Optical Center in Silicon   [ 173 K ]
  Authors: Maria Helena Nazaré, A.J. Duarte, A.G. Steele, Gordon Davies, Edward C. Lightowlers
• p197 Electronic Nature of Neutral Zinc in Silicon: FTIR-Absorption, Uniaxial Stress Measurements   [ 355 K ]
  Authors: B. Kaufmann, Achim Dörnen, M. Lang, Gerhard Pensl, D. Grünebaum, Nicolaas Stolwijk
• p203 Diffusion of Gold in Amorphous Silicon   [ 204 K ]
  Authors: W. Frank, W. Gustin, S. Coffa, J.M. Poate, D.C. Jacobson
• p209 Vibronic Interaction of a Gold-Related Center in Silicon   [ 326 K ]
  Authors: S. Ghatnekar, Mats Kleverman, Hermann G. Grimmeiss
• p215 The Gold Center in Silicon   [ 314 K ]
  Authors: A. Thilderkvist, Mats Kleverman, G.D. Watkins, Hermann G. Grimmeiss
• p221 Electronic States of Fe₄ and Mn₄ Clusters in Silicon   [ 215 K ]
  Authors: J.R. Leite, Lucy V.C. Assali, Antonio T. Lino
• p227 Diffusivities of 3D Transition-Metal Impurities in Silicon   [ 298 K ]
  Authors: H. Nakashima, Kazuya Hashimoto
• p233 Uniaxial Stress Alignment of Pd- and Ni- in Silicon   [ 223 K ]
  Authors: P.M. Williams, Frank S. Ham, Frederick G. Anderson, G.D. Watkins
• p239 Electrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in Silicon   [ 258 K ]
  Authors: K. Schmalz, Hermann G. Grimmeiss, H. Pettersson, L. Tilly, K. Tittelbach
• p245 Nickel Related Deep Levels in Germanium   [ 345 K ]
  Authors: F.X. Zach, Hermann G. Grimmeiss, Eugene E. Haller