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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

• Papers
• Abstracts

• p309 Atomic Structure of the Interstitial Defects in Electron-Irradiated Si and Ge   [ 393 K ]
  Authors: Shin Takeda, S. Muto, Masako Hirata
• p315 Interactions between Defects during the Annealing of Crystalline Silicon   [ 274 K ]
  Authors: Gordon Davies, Kwok Tat Kun, Tim Reade
• p321 An Effect of the Beam Current and Energy of Fast Electrons on the Production Rates of A-Centres and Divacancies in n-Si   [ 366 K ]
  Authors: Valentin V. Emtsev, P.M. Klinger, T.V. Mashovets
• p327 The Pseudodonor Electronic States of a Metastable Defect in Silicon Studied by Uniaxial Stress Spectroscopy   [ 286 K ]
  Authors: J.H. Svensson, Jan Erik Svensson, Erik Janzén, Olle Kordina, Bo Monemar
• p333 A New Defect Observed in Annealed Phosphorus-Doped Electron-Irradiated Silicon   [ 221 K ]
  Authors: J. Lennart Lindström, B.G. Svensson, W.M. Chen
• p339 Configurational Metastability of Carbon-Phosphorus Pair Defects in Silicon   [ 305 K ]
  Authors: Emir Gürer, Brent W. Benson, G.D. Watkins
• p345 EPR Study of Multistable C_i-P_s Silicon   [ 269 K ]
  Authors: X.D. Zhan, G.D. Watkins
• p351 Observation of a Configurationally Unstable Defect in Si   [ 279 K ]
  Authors: Charalamos A. Londos
• p357 ODMR and Electron Spin Echo Studies on the Non-Radiative Triplet State of the (V-O)° Defect in Silicon   [ 222 K ]
  Authors: A.M. Frens, J. Schmidt, W.M. Chen, Bo Monemar
• p363 Spin-Marking Method in Silicon: Interstitial and Pairing Defects   [ 243 K ]
  Authors: S.M. Yakubenya