Paper Titles

Defects and Bandtails in Amorphous Silicon
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Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors
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Donor Bistability Induced by Electron-Phonon Coupling
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The Temperature Dependence of Trap Cross Sections
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Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations
p.505

Recombination-Induced Defect Heating and Related Phenomena
p.511

Electron-Hole Mechanism of Migration and Defect Interaction
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Diluted Magnetic Semiconductors with Cr²⁺ - Unusual p-d Interaction
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Stability of the Positions of an Interstitial Impurity Atom and the Electronic States in Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Lattice Relaxation Effects on Deep Levels:...

Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

505-510

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.505

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Online since:

January 1992

Authors:

Charles W. Myles, Wei Gang Li

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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