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Defects in Semiconductors 16

Materials Science Forum Volumes 83 - 87

• Papers
• Abstracts

• p447 Impurity and Defect Induced Metastabilities in Tetrahedral Semiconductors   [ 467 K ]
  Authors: D.J. Chadi
• p457 Theory of Nitrogen and Platelets in Diamond   [ 402 K ]
  Authors: Patrick R. Briddon, M.I. Heggie, R. Jones
• p463 Ab Initio Cluster Calculation of Hyperfine Interactions and Total-Energy Surfaces for N in Diamond, Silicon and Germanium   [ 191 K ]
  Authors: A. Fazzio, C.R. Martins da Cunha, S. Canuto
• p469 Pressure Dependence of Formation and Migration Enthalpies for Atomic Diffusion in Si: Conjugate Gradient Minimization of Total Energy   [ 308 K ]
  Authors: Osamu Sugino, Atsushi Oshiyama
• p475 Many-Electron Effects in the Negative Silicon Vacancy   [ 254 K ]
  Authors: Frederick G. Anderson, Frank S. Ham, G. Grossmann
• p481 Defects and Bandtails in Amorphous Silicon   [ 175 K ]
  Authors: David A. Drabold, Peter A. Fedders, Stefan Klemm, Otto F. Sankey
• p487 Theory of Second-Order Vibronic Reduction Factors for Deep Level Impurieties in Semiconductors   [ 227 K ]
  Authors: Colin A. Bates, Janette L. Dunn, Victor Z. Polinger, Lee D. Hallam, Peter J. Kirk, Sajida Jamila
• p493 Donor Bistability Induced by Electron-Phonon Coupling   [ 247 K ]
  Authors: S. Bednarek, J. Adamowski
• p499 The Temperature Dependence of Trap Cross Sections   [ 230 K ]
  Authors: J.P. Lavine, E.K. Banghart, E.T. Nelson, W.F. DesJardin, B.C. Burkey
• p505 Lattice Relaxation Effects on Deep Levels: Molecular Dynamics Calculations   [ 314 K ]
  Authors: Charles W. Myles, Wei Gang Li