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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

• Papers
• Abstracts

• p381 Various Configurations of Silicon-Related Defects in GaAs   [ 260 K ]
  Authors: Yusuke Okada, Koichi Fujii
• p387 Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations   [ 261 K ]
  Authors: L. Pavesi, F. Piazza, I. Harrison, M. Henini
• p393 The Effect of Arsenic Vapor Pressure on Site Distribution of Silicon in Gallium Arsenide Grown by the Gradient Freeze Method   [ 181 K ]
  Authors: Koichi Fujii, Fumio Orito, H. Fujita
• p399 Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs   [ 184 K ]
  Authors: H.-M. You, U.M. Gösele, T.Y. Tan
• p405 Carbon in LEC Grown GaAs Crystals   [ 215 K ]
  Authors: Y. Otoki, M. Sahara, S. Shinzawa, S. Kuma
• p411 The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam   [ 242 K ]
  Authors: S. Fujii, Long Wei, Shoichiro Tanigawa
• p417 Impurity Diffusion into GaAs through the SiO₂ Protective Layers   [ 212 K ]
  Authors: D.K. Gautam, Yukihiro Shimogaki, Y. Nakano, K. Tada
• p423 Electron Beam Doping of Si and Zn Impurities into GaAs   [ 202 K ]
  Authors: T. Wada, Mikako Takeda, A. Takeda
• p429 Effect of Hydrogen Passivation on Lightly n-Doped GaAs   [ 151 K ]
  Authors: Chao Jung Chen, Yu Huai Chang, T.C. Chen, S.H. Li, Yun Fa Chen, H.H. Lin
• p435 Free-Carrier Saturation in III-V Compound Semiconductors   [ 258 K ]
  Authors: E. Tokumitsu, Makoto Konagai