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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

• Papers
• Abstracts

• p441 The Sn- and Si-DK Centre Properties in Double Doped (Al,Ga)As   [ 266 K ]
  Authors: D.K. Maude, U. Willke, M.L. Fille, Pierre Gibart, Jean Claude Portal
• p447 Multiplicity and Lattice Relaxation of DX Center in AlGaAs: Si Studied by Electron Emission Spectra under Pressure   [ 252 K ]
  Authors: K. Takarabe, H. Ashizawa, S. Minomura, H. Kato, Y. Watanabe, K. Matsuda
• p453 Persistent Photoconductivity and Electric-Field Quenching Related with DX Centers in AlGaAs/GaAs Heterostructure   [ 189 K ]
  Authors: Koshiro Aoki
• p459 Photo-Induced Simultaneous Transformations of Shallow Donors and EL2 States in Semi-Insulating GaAs   [ 204 K ]
  Authors: Takamitsu Shimizu, H. Kobori, T. Ohyama, E. Otsuka
• p465 Photoluminescence Study of Yb-Doped InP under Low Temperature and Pressure   [ 151 K ]
  Authors: K. Takarabe, S. Minomura, Akihito Taguchi, Kenichiro Takahei
• p471 Identification of Residual Donors in CdTe Grown by the Bridgman Method   [ 236 K ]
  Authors: S. Seto, A. Tanaka
• p477 Far-Infrared Magneto-Absorption of Donors in the Epitaxial ZnSe Layers on GaAs   [ 181 K ]
  Authors: R. Komeda, H. Nakata, T. Ohyama
• p483 Origin of Carrier Reduction by Annealing in n-Type ZnSe   [ 194 K ]
  Authors: T. Miyajima, Hideo Okuyama, Katsuhiro Akimoto, Long Wei, Shoichiro Tanigawa
• p489 Photoluminescence Characterization of Defecfs in CuGaS₂ Crystals   [ 180 K ]
  Authors: S. Shirakata, Toshiki Miyazaki, S. Isomura
• p495 Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 4H-SiC   [ 249 K ]
  Authors: W. Götz, Adolf Schöner, Gerhard Pensl, W. Suttrop, W.J. Choyke, René A. Stein, S. Leibenzeder