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Shallow Impurities in Semiconductors V

Materials Science Forum Volumes 117 - 118

• Papers
• Abstracts

• p501 Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positrons   [ 268 K ]
  Authors: H. Itho, M. Yoshikawa, I. Nashiyama, Long Wei, Shoichiro Tanigawa, S. Misawa, H. Okumura, S. Yoshida
• p507 Localized-Pair Recombination Nature of Visible Luminescence from Anodized Porous-Si   [ 257 K ]
  Authors: Yasunori Mochizuki, M. Mizuta
• p513 Visible Photoluminescence of Porous Silicon   [ 199 K ]
  Authors: H. Nishitani, H. Nakata, T. Ohyama, Yasufumi Fujiwara
• p519 Photoluminescence due to Zn-O Complexes in Silicon   [ 50 K ]
  Authors: J.D. Campion, M.O. Henry, K.G. McGuigan, Edward C. Lightowlers
• p521 High-Resolution EPR Spectroscopy of the Si-NL 10 Thermal Donor   [ 95 K ]
  Authors: T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan, W. Knap, L.C. Brunel, G. Martinez
• p523 Morphology of Oxide Precipitates in Czochralski Silicon Crystals   [ 60 K ]
  Authors: K. Sueoka, N. Ikeda, T. Yamamoto, S. Kobayashi
• p525 Site Change of Li Atoms in ZnSe by Photoirradiation   [ 65 K ]
  Authors: M. Ichimura, T. Wada, S. Fujita
• p527 Characterization of Impurities in Si(C₂H₅O)₄ for Efficient SiO₂ Production in ULSI Technology   [ 62 K ]
  Authors: T. Danno, K. Seki