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Plasma Properties, Deposition and Etching

Materials Science Forum Volumes 140 - 142

• Papers
• Abstracts

• p159 Source of Atomic Oxygen and its Application to Material Oxidation   [ 334 K ]
  Authors: A.M. Pointu, M. Touzeau, O. Guymont
• p171 Practical Applications of In-Situ Plasma-Etching Diagnostic Techniques   [ 882 K ]
  Authors: D.J. Thomas, P. Southworth, M.C. Flowers, N.J. Dartnell, R. Greef, Y. Liu
• p191 Laser-Aided Diagnostics of Processing Plasmas   [ 1 M ]
  Authors: K. Muraoka, M. Maeda
• p219 Radical Kinetics in Processing Plasmas: Optical Diagnostics of Gas Phase and Surface Reactions   [ 751 K ]
  Authors: J.P. Booth, G. Hancock
• p235 Negatively Charged Particles in Fluorocarbon RF Etch Plasmas: Density Measurements Using Microwave Resonance and the Photodetachment Effect   [ 982 K ]
  Authors: M. Haverlag, Akihiro Kono, G.M.W. Kroesen, F.J. de Hoog
• p255 Biased Electron Cyclotron Resonance Chemical-Vapor Deposition of Silicon Dioxide Inter-Metal Dielectric Thin Films   [ 832 K ]
  Authors: P. Shufflebotham, M. Weise, D. Pirkle, D. Denison
• p269 TEOS-Based Oxides: Deposition Dependent Properties   [ 533 K ]
  Authors: M. Saran, I. Emesh
• p285 Plasma Enhanced Chemical Vapor Deposited Silicon and Silicon Dioxide Films for Indium Phosphide MISFET Technology   [ 669 K ]
  Authors: M. Shokrani, V.J. Kapoor
• p301 Physical and Electrical Properties of Silicon Nitride and Oxynitride Films Prepared by Plasma Enhanced CVD   [ 722 K ]
  Authors: J. Vuillod
• p319 Preparation and Properties of PECVD Silicon Nitride Films from SiH₄ + NH₃ and/or NF₃ and SiF₄+ NH₃ Gas Mixtures   [ 637 K ]
  Authors: C. Gómez-Aleixandre, O. Sanchez, J.M. Albella