Defects in Semiconductors 17
Materials Science Forum Volumes 143 - 147
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p69
Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)
[
274 K
]
Authors: W. Götz, Adolf Schöner, W. Suttrop, Gerhard Pensl, W.J. Choyke, R. Steiner, S. Leibenzeder -
p75
Magnetic Circular Dichroism and Optically Detected EPR of a Vanadium Impurity in 6H-Silicon Carbide
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302 K
]
Authors: J. Reinke, H. Weihrich, S. Greulich-Weber, Johann Martin Spaeth -
p81
Boron in Cubic Silicon Carbide: Dynamic Effects in ESR
[
209 K
]
Authors: V. Bratus, N.P. Baran, V.M. Maksimenko, T. Petrenko, V. Romanenko -
p87
ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
[
215 K
]
Authors: M. Kunzer, Ulrich Kaufmann, Karin Maier, J. Schneider, N. Herres, Isamu Akasaki, Hiroshi Amano -
p93
Iron Acceptors in Gallium Nitride (GaN)
[
234 K
]
Authors: Karin Maier, M. Kunzer, Ulrich Kaufmann, J. Schneider, Bo Monemar, Isamu Akasaki, Hiroshi Amano -
p99
Donors in Wurtzite GaN Films: A Magnetic Resonance and Photoluminescence Study
[
275 K
]
Authors: W.E. Carlos, Jaime A. Freitas, M. Asif Khan, D.T. Olson, J.N. Kuznia -
p105
The Bound Exciton Model for Isoelectronic Centers in Silicon
[
262 K
]
Authors: Gordon Davies, Maria Helena Nazaré -
p111
Near-Surface Reactions of Gold and Silver in Silicon
[
216 K
]
Authors: H. Feichtinger, E. Sturm -
p117
A New Photoluminescent Center in Mercury-Doped Silicon
[
273 K
]
Authors: Anne Henry, Bo Monemar, J.Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett -
p123
Electrical and Optical Characterization of Magnesium- and
Calcium-Related Defect Centers in Silicon
[
5 M
]
Authors: C. Häßler, Gerhard Pensl
