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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts

• p617 Tuning of 2DEG Mobility by Modification in Ordering of Remote Impurity Charges in GaAs/AlGaAs Heterostructures   [ 275 K ]
  Authors: P. Wiśniewski, T. Suski, L.H. Dmowski, I. Gorczyca, P. Sobkowicz, J. Smoliner, E. Gornik, G. Böhm, G. Weimann
• p623 DX Centers in Reduced Dimensionality n-Type AlGaAs Structures   [ 242 K ]
  Authors: Ignacio Izpura, Elias Muñoz Merino, Enrique Calleja, F. Garcia
• p629 Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells   [ 261 K ]
  Authors: J.Peder Bergman, P.O. Holtz, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard
• p635 Photoluminescence in MOVPE-Grown Pseudomorphic InGaAs/GaAs Quantum Wells on Vicinal GaAs Surfaces   [ 278 K ]
  Authors: J.R. Botha, A.W.R. Leitch
• p641 Influence of DX Center Structure on Si Modulation δ-Doping in AlGaAs/GaAs Quantum Wells   [ 310 K ]
  Authors: G. Brunthaler, M. Seto, G. Stöger, G. Ostermayer, K. Köhler
• p647 Si Diffusion out of δ-Planes in a GaAs Superlattice   [ 263 K ]
  Authors: L. Hart, P.F. Fewster, M.J. Ashwin, M.R. Fahy, R.C. Newman
• p653 Luminescence of a Delta Doping Related Exciton in GaAs:Si   [ 168 K ]
  Authors: J.C.M. Henning, Y.A.R.R. Kessener, Paul M. Koenraad, M.R. Leys, W.C. van der Vleuten, J.H. Wolter, A.M. Frens
• p657 Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells   [ 254 K ]
  Authors: P.O. Holtz, Q.X. Zhao, Bo Monemar, M. Sundaram, J.L. Merz, A.C. Gossard
• p663 The Influence of Silicon Diffusion on the Transport Properties of the 2DEG in Si δ-Doped GaAs   [ 218 K ]
  Authors: Paul M. Koenraad, István Bársony, A.F.W. van der Stadt, J. Perenboom, J.H. Wolter
• p669 Electronic States of n-Type δ-Doping in GaAs Heterostructures   [ 254 K ]
  Authors: L.M.R. Scolfaro, J.R. Leite, C.A.C. Mendonça, D. Beliaev, S.M. Shibli, E.C.F. da Silva, E.A. Meneses