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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts

• p189 Detection of Defects Responsible for Lifetime in p-Type Si   [ 150 K ]
  Authors: M. Zazoui, J.C. Bourgoin, D. Stiévenard, D. Deresmes
• p195 Spin Dependent Photoconductivity in Silicon-on-Sapphire   [ 290 K ]
  Authors: R.C. Barklie, C. O'Raifeartaigh, L. Bradley, A.M. Hodge
• p201 Group-V Antisite Defects, V_Ga , in GaAs   [ 548 K ]
  Authors: Ulrich Kaufmann
• p211 Electronic Structure of P_In Antisite in InP   [ 251 K ]
  Authors: W.M. Chen, P. Dreszer, R.P. Leon, Eicke R. Weber, E. Sörman, Bo Monemar, B.W. Liang, C.W. Tu
• p217 On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance   [ 306 K ]
  Authors: Johann Martin Spaeth, K. Krambrock, M. Hesse
• p223 The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model   [ 315 K ]
  Authors: Hans Jürgen von Bardeleben, Christian Delerue, D. Stiévenard
• p229 The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers   [ 243 K ]
  Authors: R.C. Newman, B.R. Davidson, R. Addinall, R. Murray, J.W. Emmert, J. Wagner, W. Götz, G. Roos, Gerhard Pensl
• p235 Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide   [ 260 K ]
  Authors: Aldo Amore Bonapasta
• p241 Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes   [ 232 K ]
  Authors: A.L. Alvarez, J. Wagner, F. Calle, Manfred Maier, G. Gutierrez, A. Sacedon, Enrique Calleja, Elias Muñoz Merino
• p247 Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C   [ 291 K ]
  Authors: B.R. Davidson, R.C. Newman, R.E. Pritchard, D.A. Robbie, M.J.L. Sangster, J. Wagner, A. Fischer, K. Ploog