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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts

• p253 Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide   [ 252 K ]
  Authors: R. Jones, Sven Öberg
• p259 Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy   [ 240 K ]
  Authors: J. Wagner, M. Ramsteiner, M.J. Ashwin, M.R. Fahy, R.C. Newman, W. Braun, K. Ploog
• p265 Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs   [ 238 K ]
  Authors: M.J. Ashwin, R. Addinall, M.R. Fahy, R.C. Newman, I. Silier, E. Bauser
• p271 The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP   [ 215 K ]
  Authors: G. Weyer, P. Kringhøj, Kristian Freitag
• p277 Nitrogen-Hydrogen Complexes in GaP and GaAs   [ 267 K ]
  Authors: W.S. Hahn, B. Clerjaud, D. Côte, F. Gendron, C. Porte, W. Ulrici, Dariusz Wasik, W. Wilkening
• p283 Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide   [ 279 K ]
  Authors: H.C. Alt
• p289 Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As   [ 283 K ]
  Authors: A.C. Irvine, D.W. Palmer, J.S. Roberts
• p295 Defects in Electron Irradiated GaP and GaInP   [ 130 K ]
  Authors: M.A. Zaidi, H. Maaref, M. Zazoui, J.C. Bourgoin
• p299 Positron Lifetime Investigations of Electron Irradiated InP   [ 225 K ]
  Authors: Th. Bretagnon, S. Dannefaer, D. Kerr
• p305 Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements   [ 299 K ]
  Authors: Wulf Pfeiffer, L. Liszkay, A. Burchard, Manfred Deicher, R. Magerle, C. Ronning, Kimmo Saarinen, Pekka J. Hautojärvi