HOME CONTACT

Username: Password:

> @scientific.net

Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts

• p429 Study of Vacancy Defects in II-VI Compouds by Means of Positron Annihilation   [ 185 K ]
  Authors: R. Krause-Rehberg, Th. Drost, A. Polity
• p435 Optical and Magnetic Properties of Titanium Ions in CdTe and (Cd, Zn)Te   [ 272 K ]
  Authors: P. Peka, M.U. Lehr, J. Dziesiaty, S. Müller, J. Kreissl, P. Rudolph, H.-J. Schulz
• p441 Time-Resolved Excitation Spectroscopy of Red-Luminescence in ZnSe:Te   [ 219 K ]
  Authors: Gediminas Račiukaitis, Dainius Juodžbalis
• p447 Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds   [ 219 K ]
  Authors: L. Svob, Y. Marfaing, B. Clerjaud, D. Côte, D. Ballutaud, B. Theys, R. Druilhe, W. Kuhn, H. Stanzl, W. Gebhardt
• p453 Ligand Induced Isotope Shifts of Transition Metal Centers in ZnO   [ 318 K ]
  Authors: P. Thurian, R. Heitz, S. Kleinwächter, Andreas Hoffmann, I. Broser
• p459 Metal Vacancies in Li and In Doped ZnSe and CdS   [ 296 K ]
  Authors: Herbert Wolf, U. Hornauer, R. Lermen, Y. Endalamaw, T. Filz, Th. Krings, St. Lauer, U. Ott, E. Singer, M. Tsige, Th. Wichert
• p465 A Positron Annihilation Study of Defects in ZnO and Their Relation to Luminescence Centers   [ 305 K ]
  Authors: Jue Zhong, Peter Mascher, Werner Puff, A.H. Kitai
• p471 Defect Control in Relaxed, Graded GeSi/Si   [ 975 K ]
  Authors: E.A. Fitzgerald, Y.H. Xie, D. Monroe, G.P. Watson, J.M. Kuo, P.J. Silverman
• p483 Origin of Mosaic Structure in Relaxed Si_1-xGe_x Layers   [ 263 K ]
  Authors: P.M. Mooney, F.K. LeGoues, J.O. Chu
• p489 Point Defects in SiGe Epitaxial Layers and Bulk Crystals   [ 305 K ]
  Authors: H.B. Erzgräber, G. Kissinger, D. Krüger, T. Morgenstern, K. Schmalz, J. Schilz, M. Kurten, A. Osinsky