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Defects in Semiconductors 17

Materials Science Forum Volumes 143 - 147

• Papers
• Abstracts

• p495 Defect Characterization in P Isotype Si/SiGe/Si Heterostructures by Space Charge Spectroscopy   [ 245 K ]
  Authors: G. Bremond, A. Souifi, P. Degroodt, P. Warren, D. Dutartre, Gérard Guillot
• p501 Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence   [ 210 K ]
  Authors: Jerzy M. Langer, Ryszard Buczko
• p507 Strain Relaxation During Epitaxial Crystallization of Ge_xSi_1-x Alloy Layers Produced by Ion-Implantation   [ 480 K ]
  Authors: R.G. Elliman, W.C. Wong
• p513 Rapid Thermal Annealing of Ion Implanted Strained Si_1-xGe_x   [ 246 K ]
  Authors: E.V. Thomsen, Arne Nylandsted-Larsen, J.L. Hansen, P. Kringhøj, S.Y. Shiryaev, G. Weyer
• p519 Diffusion, Interface Mixing and Schottky Barrier Formation   [ 697 K ]
  Authors: W. Walukiewicz
• p531 Strain Relaxation in Thin ZnTe Epilayers on GaAs and ZnSe/GaAs   [ 244 K ]
  Authors: S. Bauer, Martin Huber, C. Rüth, P. Link, W. Gebhardt
• p537 1D Properties of Straight Dislocation Segments in Si and Ge   [ 255 K ]
  Authors: E.A. Steinman
• p543 Metastable Surface Defects in p-Type GaAs   [ 227 K ]
  Authors: N.T. Bagraev
• p549 Raman Study of Misfit Dislocations in ZnSe/GaAs Structures   [ 204 K ]
  Authors: W. Bała, M. Drozdowski, M. Kozielski
• p555 Electronic Properties of the (001) Surface of Diamond Covered with Hydrogen   [ 184 K ]
  Authors: V.I. Gavrilenko