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A Linear Phase Growth with Non-Equilibrium Vacancies
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Spectroscopic Studies of Phase Formation and Diffusion Processes at Interfaces
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Experimental Investigation of Reactive Phase Formation at Interfaces by Ion Beam Techniques
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TEM and In Situ HREM for Studying Metal-Semiconductor Interfacial Reactions
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Simulations of Growth
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Ordering in Semiconductor Alloys
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Chemical and Topological Structure of Alloy Surfaces: From Equilibrium to Kinetics
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HomeMaterials Science ForumMaterials Science Forum Vols. 155-156TEM and In Situ HREM for Studying...

TEM and In Situ HREM for Studying Metal-Semiconductor Interfacial Reactions

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Reactive Phase Formation at Interfaces and Diffusion Processes

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Periodical:

Materials Science Forum (Volumes 155-156)

Pages:

111-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.155-156.111

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Online since:

May 1994

Authors:

R. Sinclair, Toyohiko J. Konno, D. Hong Ko

Keywords:

Diffusion Kinetics, High Resolution TEM, In Situ TEM, Metal-Semiconductor, Silicon Crystallization

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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