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Doping of ZnSe and II-VI Quantum Structures
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Compensation Porcesses in MBE Grown ZnSe:N
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Band Offset Engineering of II-VI/III-V Heterointerfaces
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n and p Type Doping Control of CdTe and CdZnTe Epilayers and CdTe/CdZnTe Quantum Structures
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Doping Limits in Wide Gap II-VI Compounds
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Low Temperature Growth and Planar Nitrogen Doping of ZnSe in a Plasma-Stimulated LP-MOVPE System
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Formation of a Pd Defect Complex in ZnTe and CdTe
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Growth and Doping of II-VI Materials for Blue/Green Lasers
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The Thermal Decomposition of Selected Amines in Relation to the Nitrogen Doping of ZnSe by MOVPE
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HomeMaterials Science ForumMaterials Science Forum Vols. 182-184Doping Limits in Wide Gap II-VI Compounds

Doping Limits in Wide Gap II-VI Compounds

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II-VI Compounds and Semimagnetic Semiconductors

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Periodical:

Materials Science Forum (Volumes 182-184)

Pages:

29-34

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.182-184.29

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Online since:

February 1995

Authors:

W. Faschinger, S. Ferreira, H. Sitter, R. Krump, G. Brunthaler

Keywords:

Blue LED, Doping Limits, II-VI Compounds

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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