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Passivation of Metals and Semiconductors

Materials Science Forum Volumes 185 - 188

• Papers
• Abstracts

• p543 Basic Laws of Electrical Breakdown of Thin Dielectric Layers   [ 285 K ]
  Authors: V.A. Gurtov, N.Yu. Ershova, P.A. Raikerus
• p553 A New Model of Ionic and Electronic Processes during Anodic Oxidation of Valve Metals   [ 398 K ]
  Authors: L.L. Odynets
• p563 Kinetic Electronic Phenomena in Metal Oxide Dielectric Films   [ 405 K ]
  Authors: S.D. Khanin
• p573 Structure Inhomogeneities of the Oxide Dielectric and the Properties of Tantalum Capacitors   [ 343 K ]
  Authors: S.D. Khanin
• p581 Preparation and Properties of Ultra Thin Anodic Valve Metal Oxide Films   [ 394 K ]
  Authors: A.W. Hassel, M.M. Lohrengel
• p591 Logarithmic Kinetics of the Ion Charge Accumulation in the SiO₂ Dielectric Layers   [ 358 K ]
  Authors: V.N. Ovsyuk
• p601 A Surface Charge Approach to the Growth and Relaxation in Anodic Passive Films on Metals   [ 360 K ]
  Authors: M. Bojinov
• p611 Transient Ionic Space Charges in Thin Oxide Films: Determination of Thickness Distribution, Temperature, and Localized Phenomena   [ 411 K ]
  Authors: M.M. Lohrengel, S. Rüsse
• p621 A New eletrochemical Technique for In Situ Measurement of Electric Resistance and Semiconductor Characteristics of Surface Films on Metals   [ 287 K ]
  Authors: T. Saario, J. Piippo
• p631 Investigations of the Anodic Behaviour of Iron in Sulfuric Medium by the Electrochemical Quartz Crystal Microbalance under AC Regime   [ 308 K ]
  Authors: C. Gabrielli, M. Keddam, F. Minouflet, H. Perrot