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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p1 Unified Theory of Defects in Insulators   [ 460 K ]
  Authors: Y. Toyozawa
• p9 Optical and Magnetic Resonance Studies of Defects in GaN   [ 535 K ]
  Authors: E.R. Glaser
• p17 The Effective Mass Donor in Galliumnitride   [ 230 K ]
  Authors: H.C. Alt, B.K. Meyer, D. Volm, A. Graber, M. Drechsler, D.M. Hofmann, T. Detchprohm, A. Amano, Isamu Akasaki
• p23 Free Electrons and Resonant Donor State in Gallium Nitride   [ 41 K ]
  Authors: P. Perlin, T. Suski, H. Teisseyre, M. Leszczyński, I. Grzegory, J. Jun, M. Boćkowski, Sylwester Porowski, P. Boguslawski, J. Bernholc, T.D. Moustakas
• p25 Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures   [ 282 K ]
  Authors: W.E. Carlos, E.R. Glaser, T.A. Kennedy, Satoshi Nakamura
• p31 Carrier Localization in Gallium Nitride   [ 273 K ]
  Authors: C. Wetzel, W. Walukiewicz, Eugene E. Haller, J.W. Ager, A. Chen, S. Fischer, P.Y. Yu, R. Jeanloz, I. Grzegory, Sylwester Porowski, T. Suski, Hiroshi Amano, Isamu Akasaki
• p37 Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films   [ 300 K ]
  Authors: F.K. Koschnick, Johann Martin Spaeth, E.R. Glaser, K. Doverspike, L.B. Rowland, D. Kurt Gaskill, D.K. Wickenden
• p43 Luminescence of Doped and Undoped Bulk Crystals of GaN   [ 263 K ]
  Authors: H. Teisseyre, T. Suski, P. Perlin, I. Gorczyca, M. Leszczyński, I. Grzegory, J. Jun, Sylwester Porowski
• p49 Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy   [ 181 K ]
  Authors: Gyu-Chul Yi, Bruce W. Wessels
• p55 Charactrization of Residual Transition Metal Ions in GaN and AIN   [ 315 K ]
  Authors: J. Baur, Ulrich Kaufmann, M. Kunzer, J. Schneider, Hiroshi Amano, Isamu Akasaki, T. Detchprohm, K. Hiramatsu