Defects in Semiconductors 18
Materials Science Forum Volumes 196 - 201
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p61
Sn Mössbauer Study of Ion Implanted GaN
[
220 K
]
Authors: M. Fanciulli, M. Lindroos, G. Weyer, T.D. Moustakas -
p67
Ni Complexes in Diamond
[
293 K
]
Authors: J.P. Goss, A. Resende, R. Jones, Sven Öberg, Patrick R. Briddon -
p73
Nickel and Nitrogen(?) Related Defects in High Pressure Synthetic Diamond
[
223 K
]
Authors: Maria Helena Nazaré, L.M. Rino, H. Kanda -
p79
Ni Related Centers in Synthetic Diamond
[
183 K
]
Authors: D.M. Hofmann, P. Christmann, D. Volm, Klaus Pressel, Luís Pereira, Leonel Santos, E. Pereira -
p85
Defect Control and Defect Engineering in Ion-Implanted Diamond
[
341 K
]
Authors: A.A. Gippius -
p91
Ga Bound Excitons in 6H-SiC
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256 K
]
Authors: Anne Henry, Christer Hallin, I.G. Ivanov, J.Peder Bergman, Olle Kordina, Bo Monemar, Erik Janzén -
p97
Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films
[
210 K
]
Authors: Hironobu Nishikawa, Hisao Fukui, Eiji Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki -
p103
Theory of Interstitial Oxygen in Silicon and Germanium
[
272 K
]
Authors: E. Artacho, F. Yndurain -
p109
Impurity Behavior during Si Single Crystal Growth from the Melt
[
231 K
]
Authors: T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami -
p115
Lattice Sites of Li in Si and Ge
[
307 K
]
Authors: Ulrich Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss
