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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p591 Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination   [ 261 K ]
  Authors: I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan
• p597 Optical and Electrical Properties of Si:Er Light-Emitting Structures   [ 263 K ]
  Authors: N.A. Sobolev, O.V. Alexandrov, M.S. Bresler, O.B. Gusev, E.I. Shek, M.I. Makovijchuk, E.O. Parshin
• p603 Light Emission from Er-Implanted Silicon Using Anodization   [ 172 K ]
  Authors: S. Uekusa, M. Yoshida, K. Shimazu, A. Majima, K. Yabuta
• p609 Erbium Related Centers in CZ-Silicon   [ 310 K ]
  Authors: W. Jantsch, Hanka Przybylinska, Yu. Suprun-Belevich, M. Stepikhova, G. Hendorfer, L. Palmetshofer
• p615 Electrically Active Centers in Silicon Doped with Erbium   [ 281 K ]
  Authors: Valentin V. Emtsev, O.V. Alexandrov, D.S. Poloskin, E.I. Shek, N.A. Sobolev
• p621 Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source   [ 383 K ]
  Authors: Y. Fujiwara, Yoshiaki Ito, Y. Nonogaki, N. Matsubara, K. Fujita, Yoshikazu Takeda
• p627 Total Energy Calculation for Er Impurity in GaAs   [ 290 K ]
  Authors: Akihito Taguchi, Takahisa Ohno
• p633 Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors   [ 268 K ]
  Authors: Akihito Taguchi, Kenichiro Takahei
• p639 Characteristics of Er-Oxygen Complex Centers in GaAs   [ 307 K ]
  Authors: Kenichiro Takahei, Yoshiji Horikoshi, Akihito Taguchi
• p645 Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature   [ 176 K ]
  Authors: K. Takarabe, T. Mizushima, S. Minomura, Akihito Taguchi, Kenichiro Takahei