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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p651 Relaxation of Yb 4f-Shell in In(P,As) Alloys   [ 269 K ]
  Authors: A. Kozanecki, A. Szczerbakow, B. Koziarska
• p657 The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er   [ 214 K ]
  Authors: X.Z. Wang, Bruce W. Wessels
• p663 Investigation of Er-Related Centers in Doped GaP   [ 238 K ]
  Authors: X.Z. Wang, Bruce W. Wessels
• p669 High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon   [ 399 K ]
  Authors: L. Dobaczewski, P. Kamiński, R. Kozłowski, M. Surma
• p677 Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon   [ 332 K ]
  Authors: H. Weihrich, Harald Overhof
• p683 Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone Technique   [ 373 K ]
  Authors: H. Lemke
• p689 Interaction of Iron Donor with Transition-Metal Impurities in Silicon   [ 271 K ]
  Authors: Akbar Ali, M. Zafar Iqbal, N. Baber, Asghar A. Gill
• p695 Lithium-Gold-Related Photoluminescence in n-Type Silicon   [ 283 K ]
  Authors: H.P. Gislason, S. Kristjánsson, Einar O. Sveinbjörnsson
• p701 Copper Species in Ultra-Pure Germanium Crystals   [ 231 K ]
  Authors: V.B. Shmagin, Boris A. Andreev, V.A. Gavva, A.V. Gusev, T.V. Kotereva, V.G. Pimenov
• p707 Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide   [ 251 K ]
  Authors: B. Kaufmann, Achim Dörnen, Frank S. Ham