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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p773 Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe   [ 266 K ]
  Authors: J. Kreissl, K. Irmscher, P. Peka, M.U. Lehr, H.-J. Schulz, U.W. Pohl
• p779 The Titanium and Vanadium Donor in CdTe   [ 239 K ]
  Authors: P. Christmann, J. Kreissl, D. Hofmann, B.K. Meyer, R. Schwarz, K.W. Benz
• p785 Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si   [ 304 K ]
  Authors: R. Jones, Sven Öberg, P. Leary, V. Torres
• p791 The NNO Defect in Silicon   [ 276 K ]
  Authors: F. Berg Rasmussen, Sven Öberg, R. Jones, C.P. Ewels, J.P. Goss, J. Miró, Peter Deák
• p797 Generation of Deep Level by Nitrogen Diffusion in Si   [ 197 K ]
  Authors: N. Fuma, K. Tashiro, K. Kakumoto, Y. Takano
• p803 A First-Priciples Study of Carbon Impurities in GaAs and InAs   [ 244 K ]
  Authors: K.J. Chang, Sang Guk Lee, Byoung Ho Cheong
• p809 Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations   [ 520 K ]
  Authors: Michael Stavola, J.-F. Zheng, Y.M. Cheng, C.R. Abernathy, S.J. Pearton
• p817 Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy   [ 564 K ]
  Authors: Edward C. Lightowlers
• p825 A Hydrogen-Related Defect in Polycrystalline CVD Diamond   [ 304 K ]
  Authors: X. Zhou, G.D. Watkins, K.M. McNamara Rutledge
• p831 Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments   [ 341 K ]
  Authors: R.L. Lichti, C. Schwab, T.L. Estle