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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p243 Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates   [ 270 K ]
  Authors: H. Yoshida, M. Kiyama, T. Takebe, Masashi Yamashita, K. Fujita
• p249 Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States   [ 286 K ]
  Authors: J.I. Landman, C.G. Morgan, J.T. Schick, A. Kumar, P. Papoulias, M.F. Kramer
• p255 Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE   [ 265 K ]
  Authors: T.-C. Lin, S. Indou, T. Okumura
• p261 Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs   [ 238 K ]
  Authors: Hideyo Okushi, Takashi Sekiguchi, Y. Tokumaru, Koji Sumino
• p267 Studies of Deep Levels in n-GaAs by SADLTS   [ 225 K ]
  Authors: K. Sato, K. Tanaka, J. Yoshino, Yoshihiro Okamoto, J. Morimoto, T. Miyakawa
• p273 Trends in the Metastability of DX-Centers   [ 202 K ]
  Authors: T.M. Schmidt, A. Fazzio, Marilia J. Caldas
• p279 Carrier Concentrations Saturation in n Type Al_xGa_1-xAs   [ 226 K ]
  Authors: A.Y. Du, Ming Fu Li, T.C. Chong, S.J. Chua
• p285 Doping Puzzles in II-VI and III-V Semiconductors   [ 460 K ]
  Authors: D.J. Chadi, C.H. Park
• p293 Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -   [ 194 K ]
  Authors: Taketoshi Nakao, Masakatsu Suzuki, Takeshi Uenoyama, Yusuke Funayose
• p297 Acceptor Compensation in Nitrogen Doped Zinc Selenide   [ 195 K ]
  Authors: C.D. Song, Y.H. Wu, Masashi Suezawa, F. Nishiyama, Hiroshi Katayama-Yoshida, Takeshi Yao